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| Transistor 2SD1350, 2SD1350A Silicon NPN triple diffusion planer type For high breakdown voltage switching s Features q q q q q Unit: mm 2.40.2 2.00.2 3.50.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25C) Ratings 400 600 400 500 5 1 500 1 150 -55 ~ +150 1cm2 Unit 6.90.1 1.5 0.4 2.50.1 1.0 1.0 1.5 R0.9 R0.9 1.00.1 0.85 Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg 0.550.1 0.450.05 1.250.05 V 3 2 1 emitter voltage 2SD1350A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * V V A mA W C C 1:Base 2:Collector 3:Emitter 2.5 2.5 EIAJ:SC-71 M Type Mold Package Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage 2SD1350 2SD1350A 2SD1350 2SD1350A (Ta=25C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tf tstg Conditions IC = 100A, IE = 0 IC = 500A, IB = 0 IE = 100A, IC = 0 VCE = 5V, IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* VCB = 30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = -10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = -10mA VCC = 200V, IC = 100mA IB1 = 10mA, IB2 = -10mA 0.4 1.0 0.7 1.0 3.6 4.0 * min 400 600 400 500 5 30 typ max 4.10.2 s Absolute Maximum Ratings R 0. 4.50.1 7 Unit V V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time 2SD1350 2SD1350A 2SD1350 2SD1350A 2SD1350 2SD1350A 1.5 1.5 55 7 V V MHz pF s s s Fall time Storage time Pulse measurement 1 Transistor PC -- Ta 1.6 120 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 100 2SD1350, 2SD1350A IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=5 Collector power dissipation PC (W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 Collector current IC (mA) 80 IB=1.0mA 60 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 0.1mA 0 2 4 6 8 10 12 40 20 0 40 60 80 100 120 140 160 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 hFE -- IC IC/IB=5 120 VCE=5V 60 fT -- I E VCB=30V Ta=25C Base to emitter saturation voltage VBE(sat) (V) 100 Transition frequency fT (MHz) 100 300 1000 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C Forward current transfer ratio hFE 50 80 40 60 Ta=75C 25C 30 40 -25C 20 20 10 0 1 3 10 30 0 - 0.001 - 0.003 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector current IC (mA) Collector current IC (mA) Emitter current IE (A) Cob -- VCB 30 Collector output capacitance Cob (pF) 25 IE=0 f=1MHz Ta=25C 20 15 10 5 0 10 30 100 300 1000 Collector to base voltage VCB (V) 2 |
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